The following figure shows the lenovo storage n3310. Motorola order this document by 2n5088 d semiconductor technical data amplifier transistors 2n5088 2n5089 npn silicon collector 3 2 base 1 emitter 1 2 3 maximum. Small signal low noise transistors npn 2n50882n5089. Buy your 2n5089 from an authorized nte electronics distributor. Onsemi, alldatasheet, datasheet, datasheet search site for electronic. The ao3401 uses advanced trench technology to provide excellent r dson, low gate charge and operation with gate. Bipolar bjt transistor npn 25v 50ma 50mhz 625mw through hole to92. Continuous collector power dissipation operating junction and storage value 25 30 4. Lm195lm395 ultra reliable power transistors datasheet. Operation and storage junction temperature range note.
It is a great choice for your business regardless of whether you are a firsttime user of networkattached storage nas or you are deploying advanced storage solutions. Semiconductors encourages customers to verify that datasheets are current before placing orders. This data sheet and its contents the information belong to the members of the premier farnell group of companies the group or are licensed to it. Mmbt5089 datasheetpdf 1 page fairchild semiconductor. Amplifier transistornpn silicon, 2n5089 datasheet, 2n5089 circuit, 2n5089 data sheet. Nte2696 silicon npn transistor low noise audio amplifier to. Low power bipolar transistors bc107 bc108 series page 240412 v1. A operating temperature range, t storage temperature range, t note 1. The central semiconductor 2n5088 and 2n5089 are silicon npn transistors designed for low. Nte519 silicon rectifier diode ultra fast switch absolute maximum ratings. This device is designed for low noise, high gain, general purpose. Mmbt5088 datasheetpdf 1 page fairchild semiconductor. Operating junction and storage temperature range tj, tstg55 to 150 c thermal resistance ratings parameter symbol limit unit maximum junctiontoambientb r 100 cw maximum junctiontoambientc thja 166 notes a. Measured with the device soldered into a typical printed circuit board.
Absolute maximum ratings are those values beyond which the device could be permanently damaged. Pd 93893a irf7450 smps mosfet infineon technologies. The function of this device is to lower the noise figure in the region of low. Thermal resistance parameter symbol value unit junction soldering point1 kw bas21 bas2103w bas21u rthjs. Onsemi amplifier transistornpn silicon,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Pulse width limited by maximum junction temperature. Amplifier transistorsnpn siliconmaximum ratingsratingsymbol2n50882n5089unitcollectoremitter voltagevceo datasheet search, datasheets, datasheet search site for. This datasheet is subject to change without notice. Operating ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. Operating and storage junction temperature range tj, tstg. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Bipolar bjt single transistor, npn, 45 v, 160 mhz, 625 mw, 200 ma, 400 hfe. Here you can find all kinds of electronic components from the worlds leading manufacturers via worldway electronics.
Questions about transistors with high beta hfe up to 3000 without. Ambient note 1 r ja 200 cw thermal resistance, junction. Continental device india limited an isots 16949, iso 9001 and iso 14001 certified company npn silicon epitaxial transistors 2n5088 2n5089 to92 cbe c b e amplifier transistors absolute maximum ratings description symbol 2n5088 2n5089 units collector base voltage vcbo 35 30 v collector emitter voltage vce0 30 25 v emitter base voltage vebo 4. Ktc3205 npn silicon elektronische bauelemente general purpose transistor 15nov2012 rev. Free devices maximum ratings rating symbol value unit collector.
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